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IPD180N10N3GATMA1 Tech Specifications

MOSFET MV POWER MOS

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 71W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 33μA
Current - Continuous Drain (Id) @ 25°C 43A Tc
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 43A
Pulsed Drain Current-Max (IDM) 172A
Avalanche Energy Rating (Eas) 50 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2014
Part Status Active
Number of Terminations 2
Terminal Position SINGLE
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 33A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.018Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
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