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IPD30N06S223ATMA2 Tech Specifications

MOSFET N-CH 55V 30A TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 23m Ω @ 21A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 30A Tc
Rise Time 23ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 120A
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 100W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 901pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 30A
Max Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status ROHS3 Compliant
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