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IPD50N04S308ATMA1 Tech Specifications

Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 68W Tc
Power Dissipation 68W
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 7.5m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 7ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 200A
Lead Free Contains Lead
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