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IPD50N06S214ATMA2 Tech Specifications

MOSFET N-CH 55V 50A TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 240 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Additional Feature ULTRA-LOW RESISTANCE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Power Dissipation 136W
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 14.4m Ω @ 32A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 29ns
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0144Ohm
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
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