IPD50P03P4L11ATMA1 Tech Specifications

MOSFET P-CH 30V 50A TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.5m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 50A
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 100 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 58W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 85μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Drain-source On Resistance-Max 0.0105Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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