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IPD50R380CEAUMA1 Tech Specifications

IPD50R380CEAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 13V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 14.1A Tc
Drive Voltage (Max Rds On,Min Rds On) 13V
Turn-Off Delay Time 35 ns
Threshold Voltage 3V
Max Dual Supply Voltage 500V
Max Junction Temperature (Tj) 150°C
Height 2.55mm
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 98W Tc
Power Dissipation 98W
Turn On Delay Time 7.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 260μA
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Super Junction
RoHS Status ROHS3 Compliant
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