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IPD60R750E6ATMA1 Tech Specifications

Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Weight 3.949996g
Packaging Tape & Reel (TR)
Series CoolMOS™ E6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Channels 1
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 373pF
Rds On Max 750 mΩ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Published 2011
Part Status Obsolete
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 48W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 170μA
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 5.7A
Max Dual Supply Voltage 600V
Drain to Source Resistance 680mOhm
RoHS Status RoHS Compliant
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