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IPD65R600E6ATMA1 Tech Specifications

MOSFET N-CH 650V 7.3A TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 63W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 210μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Turn-Off Delay Time 64 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 700V
Avalanche Energy Rating (Eas) 142 mJ
Length 6.73mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ E6
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 2.1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 7.3A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 18A
Height 2.41mm
Width 6.22mm
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