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IPD65R950CFDBTMA1 Tech Specifications

MOSFET N-Ch 700V 3.9A DPAK-2

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series CoolMOS™
Part Status Last Time Buy
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 36.7W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 200μA
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.9A
Pulsed Drain Current-Max (IDM) 11A
Avalanche Energy Rating (Eas) 50 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.95Ohm
DS Breakdown Voltage-Min 650V
RoHS Status ROHS3 Compliant
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