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IPD80R1K4CEATMA1
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IPD80R1K4CEATMA1 Tech Specifications
Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 18 Weeks |
Mounting Type | Surface Mount |
Number of Pins | 3 |
Weight | 3.949996g |
Packaging | Tape & Reel (TR) |
Series | CoolMOS™ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Min Operating Temperature | -55°C |
Number of Elements | 1 |
Power Dissipation-Max | 63W Tc |
Power Dissipation | 63W |
FET Type | N-Channel |
Vgs(th) (Max) @ Id | 3.9V @ 240μA |
Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 12 ns |
Continuous Drain Current (ID) | 3.9A |
Max Dual Supply Voltage | 800V |
Drain to Source Resistance | 1.4Ohm |
RoHS Status | ROHS3 Compliant |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3 |
Operating Temperature | -55°C~150°C TJ |
Published | 2013 |
Part Status | Active |
Max Operating Temperature | 150°C |
Technology | MOSFET (Metal Oxide) |
Number of Channels | 1 |
Element Configuration | Single |
Turn On Delay Time | 25 ns |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Drain to Source Voltage (Vdss) | 800V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 72 ns |
Gate to Source Voltage (Vgs) | 20V |
Input Capacitance | 570pF |
Rds On Max | 1.4 Ω |
Lead Free | Lead Free |
IPD80R1K4CEATMA1 Documents
Download datasheets and manufacturer documentation for IPD80R1K4CEATMA1
-
Datasheets
Others include "IPD80" parts
The following parts include 'IPD80'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
IPD800N06N | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 5409 |
IPD800N06N G | infineon | Specialized Hot ICs | 10433 |
IPD800N06N G MOS | VBSEMI | Specialized Hot ICs | 10349 |
IPD800N06NG | INFINEO | Specialized Hot ICs | 57724 |
IPD800N06NG MOS | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 2559 |
IPD800N06NGBTMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 2645 |
IPD800N06NGBTMA1 | Infineon Technologies | Single MOSFETs Transistors | |
IPD80N04S3-06 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 55851 |
IPD80N04S3-06 MOS | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 14387 |
IPD80N04S3-06 QN0406 | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 1672 |
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IPD80R1K4CEATMA1 brand manufacturers: Infineon Technologies, Bonchip stock, IPD80R1K4CEATMA1 reference price. IPD80R1K4CEATMA1 parameters, IPD80R1K4CEATMA1 Datasheet PDF and pin diagram description download.You can use the IPD80R1K4CEATMA1 Pluggable Connectors, DSP Datesheet PDF, find IPD80R1K4CEATMA1 pin diagram and circuit diagram and usage method of function, IPD80R1K4CEATMA1 electronics tutorials.You can download from the Bonchip.
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