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IPD80R2K8CEATMA1 Tech Specifications

N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Weight 3.949996g
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Channels 1
Element Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 120μA
Current - Continuous Drain (Id) @ 25°C 1.9A Tc
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 1.9A
Max Dual Supply Voltage 800V
Drain to Source Resistance 2.4Ohm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 42W Tc
Turn On Delay Time 25 ns
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Gate to Source Voltage (Vgs) 30V
Input Capacitance 290pF
Rds On Max 2.8 Ω
Lead Free Lead Free
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