IPD90N03S4L02ATMA1 Tech Specifications

Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 2.2m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 90A
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 240 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 90μA
Current - Continuous Drain (Id) @ 25°C 90A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±16V
Drain-source On Resistance-Max 0.0022Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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