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IPDD60R050G7XTMA1 Tech Specifications

MOSFET NCH 650V 135A PG-HDSOP-10

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 10-PowerSOP Module
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 10
Terminal Position DUAL
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 22 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 800μA
Current - Continuous Drain (Id) @ 25°C 47A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 72 ns
JEDEC-95 Code TO-252
Drain-source On Resistance-Max 0.05Ohm
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series CoolMOS™ G7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Power Dissipation 278W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 15.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Height 2.5mm
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