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IPF05N03LA G Tech Specifications

MOSFET N-CH 25V 50A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 50μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0084Ohm
DS Breakdown Voltage-Min 25V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G3
Number of Elements 1
Power Dissipation-Max 94W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3110pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 50A
Pulsed Drain Current-Max (IDM) 350A
Avalanche Energy Rating (Eas) 300 mJ
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