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IPG20N06S2L65AATMA1 Tech Specifications

Trans MOSFET N-CH 55V 20A 8-Pin TDSON T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount, Wettable Flank
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2013
Part Status Active
Max Operating Temperature 175°C
Max Power Dissipation 43W
Power Dissipation 43W
Power - Max 43W
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 20A
Rise Time 3ns
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 55V
FET Feature Logic Level Gate
Rds On Max 65 mΩ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Elements 2
Turn On Delay Time 2 ns
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2V @ 14μA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 55V
Turn-Off Delay Time 10 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 410pF
Drain to Source Resistance 53mOhm
RoHS Status ROHS3 Compliant
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