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IPG20N06S415ATMA2 Tech Specifications

MOSFET 2N-CH 8TDSON

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Dual
Power Dissipation 50W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V
Rise Time 2ns
Turn-Off Delay Time 17 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0155Ohm
Avalanche Energy Rating (Eas) 90 mJ
FET Feature Standard
Length 5.15mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Number of Terminations 8
Terminal Form FLAT
Reach Compliance Code not_compliant
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 15.5m Ω @ 17A, 10V
Halogen Free Halogen Free
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1mm
Width 6.15mm
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