IPG20N06S4L11ATMA1 Tech Specifications

IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS?-T2 Power-Transistor - PG-TDSON-8-4

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form FLAT
Reach Compliance Code not_compliant
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 65W
Rds On (Max) @ Id, Vgs 11.2m Ω @ 17A, 10V
Halogen Free Halogen Free
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 165 mJ
FET Feature Logic Level Gate
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Max Power Dissipation 65W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 11 ns
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.2V @ 28μA
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Rise Time 3ns
Turn-Off Delay Time 58 ns
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0112Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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