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IPI041N12N3GAKSA1 Tech Specifications

Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 120A
Max Dual Supply Voltage 120V
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 52ns
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0041Ohm
Avalanche Energy Rating (Eas) 900 mJ
Lead Free Contains Lead
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