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IPI60R099CPXKSA1 Tech Specifications

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Not For New Designs
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 255W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 99m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 31A
Pulsed Drain Current-Max (IDM) 93A
Avalanche Energy Rating (Eas) 800 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Current - Continuous Drain (Id) @ 25°C 31A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.099Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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