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IPI65R190CFDXKSA1 Tech Specifications

MOSFET N-CH 650V 17.5A TO262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Active
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 151W Tc
Power Dissipation 151W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 7.3A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 17.5A Tc
Rise Time 8.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 53.2 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 57.2A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 730μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6.4 ns
Continuous Drain Current (ID) 17.5A
Max Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 484 mJ
Lead Free Lead Free
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