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IPI80N06S207AKSA2 Tech Specifications

MOSFET N-CH 55V 80A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 180μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 61 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0066Ohm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 250W Tc
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 6.6m Ω @ 68A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 55V
Radiation Hardening No
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