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IPI90N06S4L04AKSA2 Tech Specifications

MOSFET N-CH 60V 80A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±16V
Max Dual Supply Voltage 60V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 150W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 3.7m Ω @ 90A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 90A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 90A
RoHS Status ROHS3 Compliant
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