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IPL60R075CFD7AUMA1 Tech Specifications

MOSFET N-CH 4VSON

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 4-PowerTSFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ CFD7
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 189W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 760μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.075Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -40°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PSSO-N4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 15.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2721pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 33A
Pulsed Drain Current-Max (IDM) 129A
Avalanche Energy Rating (Eas) 151 mJ
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