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IPL65R1K5C6SATMA1 Tech Specifications

Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ C6
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-N5
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 3A Tc
Rise Time 5.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 75.891673mg
Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 26.6W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 18.2 ns
Continuous Drain Current (ID) 3A
Max Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 26 mJ
Lead Free Contains Lead
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