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IPN60R3K4CEATMA1 Tech Specifications

MOSFET NCH 600V 2.6A SOT223

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 2.6A
DS Breakdown Voltage-Min 600V
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-223-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 5W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 40μA
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Threshold Voltage 3V
FET Feature Super Junction
RoHS Status ROHS3 Compliant
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IPN60R3K4CEATMA1 Documents

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