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IPP083N10N5AKSA1 Tech Specifications

IPP083N10N5AKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.8V @ 49μA
Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 73A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0083Ohm
Pulsed Drain Current-Max (IDM) 292A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.3m Ω @ 73A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 73A Tc
Rise Time 5ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 42 mJ
Lead Free Contains Lead
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IPP083N10N5AKSA1 Documents

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