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IPP100N04S303AKSA1 Tech Specifications

Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220AB Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 214W Tc
Power Dissipation 214W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Avalanche Energy Rating (Eas) 898 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 30 ns
Rds On (Max) @ Id, Vgs 2.8m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 46 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Radiation Hardening No
Lead Free Contains Lead
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