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IPP100N06S2L05AKSA2 Tech Specifications

MOSFET N-CH 55V 100A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Manufacturer Package Identifier IPP100N06S2L-05
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 24 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0059Ohm
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Published 1999
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Rds On (Max) @ Id, Vgs 4.7m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 98 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 810 mJ
Lead Free Contains Lead
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