IPP100N08N3GXKSA1 Tech Specifications

Trans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220 Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 46μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 280A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 100W Tc
Power Dissipation 100W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 70A Tc
Rise Time 46ns
Vgs (Max) ±20V
Turn-Off Delay Time 22 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 90 mJ
Lead Free Lead Free
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