IPP114N03L G Tech Specifications

MOSFET N-CH 30V 30A TO-220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 30A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 30A
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 30 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 38W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0114Ohm
DS Breakdown Voltage-Min 30V
RoHS Status RoHS Compliant
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