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IPP120N04S302AKSA1 Tech Specifications

MOSFET N-CH 40V 120A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 230μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 120A
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 1880 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 2.3m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 14300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0023Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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