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IPP16CN10LGXKSA1 Tech Specifications

Trans MOSFET N-CH 100V 54A 3-Pin(3+Tab) TO-220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 100W Tc
Power Dissipation 100W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 61μA
Current - Continuous Drain (Id) @ 25°C 54A Tc
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Reach Compliance Code unknown
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.7m Ω @ 54A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4190pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 54A
Gate to Source Voltage (Vgs) 20V
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