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IPP200N25N3GXKSA1 Tech Specifications

Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.02Ohm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 64A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 64A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 45 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 250V
Pulsed Drain Current-Max (IDM) 256A
Lead Free Lead Free
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IPP200N25N3GXKSA1 Documents

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