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IPP45P03P4L11AKSA1 Tech Specifications

MOSFET P-CH 30V 45A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Vgs(th) (Max) @ Id 2V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Turn-Off Delay Time 45 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage -30V
Pulsed Drain Current-Max (IDM) 180A
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 58W Tc
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 11.1m Ω @ 45A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 45A Tc
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 5V
Drain-source On Resistance-Max 0.0111Ohm
Avalanche Energy Rating (Eas) 110 mJ
Lead Free Contains Lead
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