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IPP80N04S2L03AKSA1 Tech Specifications

MOSFET OptiMOS PWR TRANST 40V 80A

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 213nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
Rds On (Max) @ Id, Vgs 3.4m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 50ns
Vgs (Max) ±20V
Turn-Off Delay Time 77 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 40V
Lead Free Contains Lead
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