IPP80N04S306AKSA1 Tech Specifications

MOSFET N-CH 40V 80A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~175°C TJ
Published 2007
Part Status Obsolete
Number of Terminations 3
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 100W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 52μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 125 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 5.7m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0057Ohm
DS Breakdown Voltage-Min 40V
RoHS Status RoHS Compliant
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