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IPP80N06S208AKSA2 Tech Specifications

MOSFET N-CH 55V 80A TO220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Voltage 55V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 8m Ω @ 58A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 215W Tc
Current 80A
Power Dissipation 215W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Avalanche Energy Rating (Eas) 450 mJ
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