IPT60R028G7XTMA1 Tech Specifications

IPT60R028G7XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 8-PowerSFN
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 391W Tc
Power Dissipation 391W
Turn On Delay Time 28 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 1.44mA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 100 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 288 mJ
Height 2.4mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Manufacturer Package Identifier PG-HSOF-8
Packaging Tape & Reel (TR)
Series CoolMOS™ G7
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 28.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 75A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 245A
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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IPT60R028G7XTMA1 Documents

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