IPT65R033G7XTMA1 Tech Specifications

IPT65R033G7XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 8-PowerSFN
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 391W Tc
Turn On Delay Time 20 ns
Rds On (Max) @ Id, Vgs 33m Ω @ 28.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 69A
Drain to Source Breakdown Voltage 650V
Height 2.4mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Manufacturer Package Identifier PG-HSOF-8
Packaging Tape & Reel (TR)
Series CoolMOS™ C7
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Channels 1
Power Dissipation 391W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1.44mA
Current - Continuous Drain (Id) @ 25°C 69A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 85 ns
Gate to Source Voltage (Vgs) 20V
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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