IPU60R2K0C6AKMA1 Tech Specifications

MOSFET N-CH 600V TO-251

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 60μA
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 2.4A
Drain-source On Resistance-Max 2Ohm
Avalanche Energy Rating (Eas) 11 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 22.3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 760mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 6A
RoHS Status RoHS Compliant
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