IPU60R950C6BKMA1 Tech Specifications

Trans MOSFET N-CH 650V 4.4A 3-Pin(3+Tab) TO-251

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Discontinued
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 37W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 1.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Rise Time 8ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.95Ohm
Avalanche Energy Rating (Eas) 46 mJ
Length 6.73mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Power Dissipation-Max 37W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 4.4A
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 650V
Height 6.22mm
Width 2.41mm
Lead Free Contains Lead
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