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IPW60R045CPFKSA1 Tech Specifications

Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 49 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Voltage - Rated DC 600V
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 431W Tc
Power Dissipation 431W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 44A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
Threshold Voltage 2.5V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Current Rating 60A
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 3mA
Current - Continuous Drain (Id) @ 25°C 60A Tc
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.045Ohm
Height 25.549mm
RoHS Status ROHS3 Compliant
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