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IPW65R019C7FKSA1 Tech Specifications

IPW65R019C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 19m Ω @ 58.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 75A
Max Dual Supply Voltage 650V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ C7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 446W Tc
Power Dissipation 446W
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 2.92mA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 27ns
Vgs (Max) ±20V
Turn-Off Delay Time 106 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 496A
Lead Free Lead Free
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IPW65R019C7FKSA1 Documents

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