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IPZ65R045C7XKSA1 Tech Specifications

MOSFET N-CH 650V 46A TO247-4

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 227W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 46A
Max Dual Supply Voltage 650V
Height 21.1mm
Width 5.21mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-4
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ C7
Part Status Active
Number of Terminations 4
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Power Dissipation 227W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 46A Tc
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 82 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Length 16.13mm
RoHS Status ROHS3 Compliant
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