IRF1010EPBF Tech Specifications

IRF1010EPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 12mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 53 ns
Continuous Drain Current (ID) 84A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Dual Supply Voltage 60V
Height 16.51mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 60V
Current Rating 84A
Number of Elements 1
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 84A Tc
Rise Time 78ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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