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IRF1010EZPBF Tech Specifications

IRF1010EZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Active
Number of Terminations 3
Resistance 8.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 90ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 60V
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 60V
Current Rating 75A
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 51A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 54 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 99 mJ
Height 9.017mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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IRF1010EZPBF Documents

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