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IRF1018ESLPBF Tech Specifications

MOSFET N-CH 60V 79A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 79A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Threshold Voltage 4V
Drain-source On Resistance-Max 0.0084Ohm
Avalanche Energy Rating (Eas) 88 mJ
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) 40
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 79A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Recovery Time 39 ns
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
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