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IRF1404STRRPBF Tech Specifications

MOSFET N-CH 40V 162A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 162A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 162A
Drain Current-Max (Abs) (ID) 75A
Pulsed Drain Current-Max (IDM) 650A
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Resistance 4mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 162A Tc
Rise Time 140ns
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 4.826mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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