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IRF1607PBF Tech Specifications

MOSFET N-CH 75V 142A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
Part Status Obsolete
Number of Terminations 3
Resistance 7.5Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 22 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 142A Tc
Rise Time 130ns
Vgs (Max) ±20V
Turn-Off Delay Time 84 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Pulsed Drain Current-Max (IDM) 570A
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 75V
Current Rating 142A
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 85A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 86 ns
Continuous Drain Current (ID) 142A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Height 16.51mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRF1607PBF Documents

Download datasheets and manufacturer documentation for IRF1607PBF

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