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IRF2903ZSPBF Tech Specifications

MOSFET N-CH 30V 75A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 231W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 100ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 30V
Recovery Time 51 ns
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 231W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 260A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0024Ohm
Avalanche Energy Rating (Eas) 820 mJ
Nominal Vgs 4 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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